CQ223M Triac DATASHEET

CQ223M ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 10 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 10 mA

Package: SOT‑223

 

CQ223M Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CQ223M Datasheet

Page #1

Page #2

Description

TM Central CQ223M CQ223N Semiconductor Corp. 1.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL CQ223M CQ223N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=80°C) IT (RMS) 1.0 A Peak One Cycle