CQ223N Triac Spec

CQ223N ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 3 W
   Maximum repetitive peak and off-state voltage (VDRM): 200 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 35 A
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 160 K/W
   Junction to case thermal resistance (RTH(j-c)): 9 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 2.1 V
   Triggering gate current (IGT): 5 mA
   Holding current (IH): 5 mA

Package: TO‑205AD

 

CQ223N Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

CQ223N Spec

Page #1

CQ223N datasheet

Page #2

CQ223N datasheet #2

Description

TM Central CQ223M CQ223N Semiconductor Corp. 1.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL CQ223M CQ223N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=80°C) IT (RMS) 1.0 A Peak One Cycle