CQ223N Triac DATASHEET

CQ223N ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 35 A
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 160 K/W
   Junction to case thermal resistance (R_TH(j-c)): 9 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 2.1 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 5 mA

Package: TO‑205AD

 

CQ223N Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CQ223N Datasheet

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Description

TM Central CQ223M CQ223N Semiconductor Corp. 1.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL CQ223M CQ223N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=80°C) IT (RMS) 1.0 A Peak One Cycle