CQ89N Triac DATASHEET

CQ89N ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 2 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -45..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 10 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.75 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 5 mA

Package: SOT‑89

 

CQ89N Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CQ89N Datasheet

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Description

TM CQ89D Central CQ89M Semiconductor Corp. CQ89N 1.0 AMP TRIAC DESCRIPTION: 400 THRU 800 VOLTS The CENTRAL SEMICONDUCTOR CQ89D series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL CQ89D CQ89M CQ89N UNITS Peak Repetitive Off-State Voltage VDRM 400 600 800 V RMS On-State Current (TC=80°C) IT (RMS) 1.0 A Peak