CQ89NS Triac Spec

CQ89NS ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 20 A
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 180 K/W
   Junction to case thermal resistance (R_TH(j-c)): 90 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.26 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 5 mA

Package: TO‑92

CQ89NS Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones