CQ92DT Triac DATASHEET

CQ92DT ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 20 A
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 180 K/W
   Junction to case thermal resistance (R_TH(j-c)): 90 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.26 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 5 mA

Package: TO‑92

 

CQ92DT Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CQ92DT Datasheet

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Description

TM CQ92BT Central CQ92DT Semiconductor Corp. CQ92MT CQ92NT TRIAC DESCRIPTION: 1.0 AMP, 200 THRU 800 VOLTS The CENTRAL SEMICONDUCTOR CQ92BT Series are epoxy molded silicon Triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ92BT CQ92DT CQ92MT CQ92NT UNITS Peak Repetitive Off-State Voltage VDRM 200 400 600 800 V RMS On-St