CQDD-12M Triac Spec

CQDD-12M ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 80 A
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 0.02 mA
   Holding current (IH): 25 mA

Package: TO‑263

 

CQDD-12M Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

CQDD-12M Spec

Page #1

CQDD-12M datasheet

Page #2

CQDD-12M datasheet #2

Description

CQDD-12M CQDD-12N www.centralsemi.com SURFACE MOUNT DESCRIPTION: 12 AMP SILICON TRIAC The CENTRAL SEMICONDUCTOR CQDD-12M series 600 THRU 800 VOLTS type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQDD-12M CQDD-12N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=9