CQDD-8N SCR Spec

CQDD-8N ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 0.3 A
   Non repetitive surge peak on-state current (ITSM): 10 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 180 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.6 V

Package: TO‑92

 

CQDD-8N Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

CQDD-8N Spec

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CQDD-8N datasheet

Page #2

CQDD-8N datasheet #2

Description

CQDD-8M CQDD-8N www.centralsemi.com SURFACE MOUNT DESCRIPTION: 8 AMP SILICON TRIAC The CENTRAL SEMICONDUCTOR CQDD-8M series 600 THRU 800 VOLTS type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQDD-8M CQDD-8N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=90°C)