CR05AS SCR DATASHEET
CR05AS ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 0.1 A
Non repetitive surge peak on-state current (ITSM): 10 A
Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
Junction to case thermal resistance (RTH(j-c)): 500 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.9 V
Package: SOT‑346
CR05AS Datasheet
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Description
SMD Type Thyristor Silicon Controlled Rectifiers CR05AS ■ Features 1.70 0.1 ● Blocking Voltage to 400 V ● High Surge Current Capability — 10 A ● Glass-Passivated Surface for Reliability and Uniformity 0.42 0.1 0.46 0.1 1.Gate 2.Anode G 3.Cathode A K ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit V DRM Peak Repetitive Forward and Reverse Blocking Voltage and 400 V (T = 25 to 125℃, R = 1 K Ω) J GK V RRM Forward Current RMS I 0.8
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |