All Transistors. SCR. CR05AS Datasheet

 

CR05AS SCR DATASHEET

CR05AS ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 0.1 A
   Non repetitive surge peak on-state current (ITSM): 10 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..125 °C
   Junction to case thermal resistance (RTH(j-c)): 500 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.9 V

Package: SOT‑346

 

CR05AS Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

CR05AS Datasheet

Page #1

CR05AS
 datasheet

Page #2

CR05AS
 datasheet #2

Description

SMD Type Thyristor Silicon Controlled Rectifiers CR05AS ■ Features 1.70 0.1 ● Blocking Voltage to 400 V ● High Surge Current Capability — 10 A ● Glass-Passivated Surface for Reliability and Uniformity 0.42 0.1 0.46 0.1 1.Gate 2.Anode G 3.Cathode A K ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit V DRM Peak Repetitive Forward and Reverse Blocking Voltage and 400 V (T = 25 to 125℃, R = 1 K Ω) J GK V RRM Forward Current RMS I 0.8

 
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