CR05AS-8 SCR DATASHEET

CR05AS-8 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 1.26 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Triggering gate voltage (V_GT): 0.1 V
   Triggering gate current (I_GT): 0.8 mA

CR05AS-8 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

CR05AS-8 Datasheet

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Description

Preliminary Datasheet CR05AS-8 R07DS0135EJ0500 (Previous: REJ03G0348-0400) Thyristor Rev.5.00 Low Power Use Sep 15, 2010 Features  IT (AV) : 0.5 A  Non-Insulated Type  VDRM : 400 V  Planar Passivation Type  IGT : 100 A  Surface Mounted type Outline RENESAS Package code: PLZZ0004CA-A RENESAS Package code: PLZ de: LZZ0004CB-A de: PLZ (Package name: UPAK) (Package name: SOT- OT-89) OT-89) 2, 4 1. Cathode 3 4 4 4 2 2. Anode 1 1 3. Gate 4.

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CR05AS-8 Datasheet