CR05BS-8 SCR DATASHEET

CR05BS-8 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 12 A
   Non repetitive surge peak on-state current (I_TSM): 360 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.2 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 0.03 mA

CR05BS-8 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

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CR05BS-8 Datasheet

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Description

Preliminary Datasheet CR05BS-8 R07DS0136EJ0300 (Previous: REJ03G0347-0200) Thyristor Rev.3.00 Low Power Use Oct 13, 2010 Features  IT (AV) : 0.1 A  Planar Passivation Type  VDRM : 400 V  Surface Mounted type  IGT : 100 A  Completed Pb free product  Non-Insulated Type Outline RENESAS Package code: PLSP0003ZB-A RENESAS Package code: PLSP0003ZA-A LSP0 0003 (Package name:MPAK) (Package name:SC-59) 2 2 2 1. Cathode 1 2. Anode 1 3. Gate 3

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CR05BS-8 Datasheet