CR12PM-12B SCR DATASHEET

CR12PM-12B ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 3 A
   Non repetitive surge peak on-state current (I_TSM): 70 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 4.1 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.6 V

Package: TO‑220F

CR12PM-12B Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

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CR12PM-12B Datasheet

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Description

Preliminary Datasheet CR12PM-12B R07DS0119EJ0100 Thyristor Rev.1.00 Medium Power Use Sep 03, 2010 Features  IT (AV) : 12 A  The product guaranteed maximum junction temperature of 150°C  VDRM : 600 V  Insulated Type  IGT : 30 mA  Planar Passivation Type  Viso : 2000 V  UL Recognized: Yellow Card No. E223904 Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F) 2 1. Cathode 2. Anode 3 3. Gate 1 1 2 3 Applications S

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CR12PM-12B Datasheet