CR8PM-12A SCR DATASHEET
CR8PM-12A ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 120 W
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 140 A
Maximum RMS on-state current (IT(RMS)): 260 A
Non repetitive surge peak on-state current (ITSM): 3100 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.18 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.35 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 200 mA
Package: TO‑209AC
CR8PM-12A Datasheet
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Description
Preliminary Datasheet CR8PM-12A R07DS0116EJ0200 (Previous: REJ03G0359-0100) Thyristor Rev.2.00 Medium Power Use Sep 13, 2010 Features IT (AV) : 8 A Insulated Type VDRM : 600 V Planar Passivation Type IGT : 15 mA UL Recognized : Yellow Card No. E223904 Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F) 2 1. Cathode 2. Anode 3 1 3. Gate 1 2 3 Applications Switching mode power supply, regulator for aut
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |