CRD5AS-12B SCR DATASHEET

CRD5AS-12B ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2.15 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 5 mA

Package: TO‑206AA

CRD5AS-12B Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

CRD5AS-12B Datasheet

Page #1

Page #2

Description

Preliminary Datasheet CRD5AS-12B R07DS0503EJ0100 Reverse Conducting Thyristor Rev.1.00 Medium Power Use Jul 07, 2011 Features  IT (AV) : 5 A  Built-in reverse conducting diode  VDRM : 600 V  Planar Type  IGT: 100 A  The Product guaranteed maximum junction temperature 150C Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 1. Cathode 2. Anode 3 3. Gate 1 4. Anode 2 1 3 Applications Switching mode power supply, R

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CRD5AS-12B Datasheet