CS18BZ SCR DATASHEET

CS18BZ ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2.15 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 5 mA

Package: TO‑206AA

 

CS18BZ Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CS18BZ Datasheet

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Description

CS18BZ CS18DZ CS18MZ www.centralsemi.com CS18NZ DESCRIPTION: SILICON CONTROLLED RECTIFIERS The CENTRAL SEMICONDUCTOR CS18BZ series 1.0 AMP, 200 THRU 800 VOLT types are hermetically sealed silicon controlled rectifiers manufactured in a TO-18 case, designed for control systems and sensing circuit applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL CS18BZ CS18DZ CS18MZ CS18NZ UNITS Peak Repetitive Off-State Voltage VDR