CS18N SCR DATASHEET

CS18N ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 20 A
   Maximum RMS on-state current (I_T(RMS)): 31 A
   Non repetitive surge peak on-state current (I_TSM): 195 A
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.7 K/W

Package: TO‑263

 

CS18N Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CS18N Datasheet

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Description

CS18B CS18D CS18M www.centralsemi.com CS18N DESCRIPTION: SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR CS18B series 1 AMP, 200 THRU 800 VOLTS types are hermetically sealed silicon controlled rectifiers manufactured in a TO-18 case, designed for control systems and sensing circuit applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL CS18B CS18D CS18M CS18N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 200