CS19-08HO1 SCR DATASHEET

CS19-08HO1 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 20 A
   Maximum RMS on-state current (I_T(RMS)): 31 A
   Non repetitive surge peak on-state current (I_TSM): 195 A
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.7 K/W

Package: TO‑263

CS19-08HO1 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

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CS19-08HO1 Datasheet

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Description

CS 19 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 29 A IT(AV)M = 19 A TO-220 AB VRSM VRRM Type Type A VDSM VDRM C C A A (TAB) G V V TO 220 TO 263 G 800 800 CS 19-08ho1 CS 19-08ho1S TO-263 AA 1200 1200 CS 19-12ho1 CS 19-12ho1S C A (TAB) G A = Anode, C = Cathode, G = Gate Symbol Test Conditions Maximum Ratings IT(RMS) TVJ = TVJM 29 A IT(AV)M TC = 85°C; 180° sine 19 A Features ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 160 A SCR for frequency up to 400Hz VR

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Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CS19-08HO1 Datasheet