All Transistors. SCR. CS19-08HO1S Datasheet

 

CS19-08HO1S SCR DATASHEET

CS19-08HO1S ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1200 V
   Maximum average on-state current (IT(AVR)): 20 A
   Maximum RMS on-state current (IT(RMS)): 31 A
   Non repetitive surge peak on-state current (ITSM): 280 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..150 °C
   Junction to case thermal resistance (RTH(j-c)): 0.6 K/W

Package: TO‑247

 

CS19-08HO1S Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

CS19-08HO1S Datasheet

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CS19-08HO1S
 datasheet

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CS19-08HO1S
 datasheet #2

Description

CS 19 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 29 A IT(AV)M = 19 A TO-220 AB VRSM VRRM Type Type A VDSM VDRM C C A A (TAB) G V V TO 220 TO 263 G 800 800 CS 19-08ho1 CS 19-08ho1S TO-263 AA 1200 1200 CS 19-12ho1 CS 19-12ho1S C A (TAB) G A = Anode, C = Cathode, G = Gate Symbol Test Conditions Maximum Ratings IT(RMS) TVJ = TVJM 29 A IT(AV)M TC = 85°C; 180° sine 19 A Features ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 160 A SCR for frequency up to 400Hz VR

 
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