CS202-4M-2 SCR DATASHEET

CS202-4M-2 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 2500 V
   Maximum average on-state current (I_T(AVR)): 18 A
   Non repetitive surge peak on-state current (I_TSM): 215 A
   Critical rate of rise of off-state voltage (dV/dt): 2500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.92 K/W

Package: I4‑PAK

CS202-4M-2 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

CS202-4M-2 Datasheet

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Description

CS202-4B-2 CS202-4D-2 CS202-4M-2 www.centralsemi.com CS202-4N-2 DESCRIPTION: 4.0 AMP SCR The CENTRAL SEMICONDUCTOR CS202-4B-2 series 200 THRU 800 VOLTS type is an epoxy molded silicon controlled rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CS202 CS202 CS202 CS202 SYMBOL -4B-2 -4D-2 -4M-2 -4N-2 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 60

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CS202-4M-2 Datasheet