CS55B SCR Spec

CS55B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 0.8 A
   Non repetitive surge peak on-state current (ITSM): 10 A
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 20 mA
   Holding current (IH): 5 mA

Package: TO‑92

 

CS55B Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

CS55B Spec

Page #1

CS55B datasheet

Page #2

CS55B datasheet #2

Description

DATA SHEET CS55B CS55D SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CS55B series type are epoxy molded silicon controlled rectifiers designed for applications requiring a low gate sensitivity. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL CS55B CS55D UNITS Peak Repetitive Off-State Voltage VDRM,VRRM 200 400 V RMS On-State Current (TC=60oC) IT(RMS) 0.8 A Peak One Cycle Surge (t=10ms) ITSM 10 A I2