CS55BZ SCR DATASHEET

CS55BZ ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 60 A
   Maximum RMS on-state current (I_T(RMS)): 75 A
   Non repetitive surge peak on-state current (I_TSM): 1510 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..140 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.32 K/W

Package: PLUS247

 

CS55BZ Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CS55BZ Datasheet

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Description

DATA SHEET CS55BZ CS55DZ SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CS55BZ series type are epoxy molded silicon controlled rectifiers designed for applications requiring extremely low gate sensitivity. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL CS55BZ CS55DZ UNITS Peak Repetitive Off-State Voltage VDRM,VRRM 200 400 V RMS On-State Current (TC=60oC) IT(RMS) 0.8 A Peak One Cycle Surge (t=10ms) I