CS55DZ SCR Spec

CS55DZ ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 60 A
   Maximum RMS on-state current (IT(RMS)): 75 A
   Non repetitive surge peak on-state current (ITSM): 1510 A
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): ..140 °C
   Junction to case thermal resistance (RTH(j-c)): 0.32 K/W

Package: PLUS247

 

CS55DZ Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

CS55DZ Spec

Page #1

CS55DZ datasheet

Page #2

CS55DZ datasheet #2

Description

DATA SHEET CS55BZ CS55DZ SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CS55BZ series type are epoxy molded silicon controlled rectifiers designed for applications requiring extremely low gate sensitivity. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL CS55BZ CS55DZ UNITS Peak Repetitive Off-State Voltage VDRM,VRRM 200 400 V RMS On-State Current (TC=60oC) IT(RMS) 0.8 A Peak One Cycle Surge (t=10ms) I