CS72-12IO8 SCR DATASHEET

CS72-12IO8 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum peak gate power (P_GM): 10 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 16 A
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 250 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.5 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 30 mA
   Holding current (I_H): 80 mA

Package: TO‑208AB

CS72-12IO8 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

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CS72-12IO8 Datasheet

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Description

CS 72 Phase Control Thyristors VRRM = 1200-1600 V IT(RMS) = 160 A IT(AV)M = 100 A 2 3 4 TO-209AC VRSM VRRM Type (TO-94) 1 2 VDSM VDRM 4 VV 3 1300 1200 CS 72-12io8 1700 1600 CS 72-16io8 Not for new application 1 M12 Symbol Test Conditions Maximum Ratings 1 = Anode, 2 = Cathode, IT(RMS) TVJ = TVJM 160 A 3 = Gate, 4 = Auxiliary Cathode IT(AV)M Tcase = 85°C; 180° sine 75 A Tcase = 65°C; 180° sine 100 A Features Thyristor for line frequencies ITSM TVJ = 45°C; t = 1

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Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CS72-12IO8 Datasheet