CS8-12IO2 SCR DATASHEET

CS8-12IO2 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 5 mA

Package: TO‑92

CS8-12IO2 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

CS8-12IO2 Datasheet

Page #1

Page #2

Description

CS 8 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 25 A IT(AV)M = 16 A 2 TO-64 VRSM VRRM Type VDSM VDRM 12 3 VV 3 900 800 CS 8-08io2 1300 1200 CS 8-12io2 1 M5 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings Features Thyristor for line frequencies IT(RMS) TVJ = TVJM 25 A International standard package IT(AV)M Tcase = 85°C; 180° sine 16 A JEDEC TO-64 Planar glassivated chip ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 250 A Long-term stabil

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CS8-12IO2 Datasheet