CSD-4N SCR DATASHEET

CSD-4N ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 12 A
   Non repetitive surge peak on-state current (I_TSM): 110 A
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 0.02 mA
   Holding current (I_H): 20 mA

Package: TO‑263

CSD-4N Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

CSD-4N Datasheet

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Description

CSD-4M CSD-4N www.centralsemi.com SURFACE MOUNT DESCRIPTION: SILICON CONTROLLED RECTIFIERS The CENTRAL SEMICONDUCTOR CSD-4M and 4.0 AMP, 600 THRU 800 VOLT CSD-4N are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSD-4M CSD-4N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 600 800 V RMS On-State Current (TC=85°C) IT(RMS) 4.0 A Peak One Cycle Sur

LIST

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CSD-4N Datasheet