CSD-8M SCR DATASHEET
CSD-8M ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 110 A
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 0.02 mA
Holding current (IH): 20 mA
Package: TO‑263
CSD-8M Datasheet
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Description
CSD-8M CSD-8N www.centralsemi.com SURFACE MOUNT DESCRIPTION: SILICON CONTROLLED RECTIFIERS The CENTRAL SEMICONDUCTOR CSD-8M and 8.0 AMP, 600 THRU 800 VOLT CSD-8N are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSD-8M CSD-8N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 600 800 V RMS On-State Current (TC=90°C) IT(RMS) 8.0 A Peak One Cycle Sur
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |