CSDD-8N SCR DATASHEET

CSDD-8N ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1400 V
   Maximum average on-state current (I_T(AVR)): 1850 A
   Maximum RMS on-state current (I_T(RMS)): 2900 A
   Non repetitive surge peak on-state current (I_TSM): 32500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -55..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.02 K/W
   Triggering gate voltage (V_GT): 3.5 V
   Peak on-state voltage drop (V_TM): 0.9 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 300 mA

 

CSDD-8N Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CSDD-8N Datasheet

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Description

CSDD-8M CSDD-8N www.centralsemi.com SURFACE MOUNT DESCRIPTION: SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR CSDD-8M series 8 AMP, 600 THRU 800 VOLTS type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSDD-8M CSDD-8N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 600 800 V RMS On-State Current (TC=90°C)