DCR4880M42 SCR DATASHEET
DCR4880M42 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 100 W
Maximum repetitive peak and off-state voltage (VDRM): 1000 V
Maximum average on-state current (IT(AVR)): 456 A
Maximum RMS on-state current (IT(RMS)): 717 A
Non repetitive surge peak on-state current (ITSM): 5500 A
Critical repetitive rate of rise of on-state current (dI/dt): 350 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -55..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.06 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.05 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 30 mA
Package: T
DCR4880M42 Datasheet
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Description
DCR4880M42 Phase Control Thyristor DS5943-4 April 2013 (LN30252) KEY PARAMETERS FEATURES Double Side Cooling VDRM 4200V IT(AV) 4880A High Surge Capability ITSM 60800A dV/dt* 2000V/µs dI/dt 400A/µs * Higher dV/dt selections available APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Repetitive Peak Conditions Ordering Voltages Number VDRM and VRRM V DCR4880M42* 4200 Tvj = -40°C
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Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |