DCR504ST10 SCR DATASHEET
DCR504ST10 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 100 W
Maximum repetitive peak and off-state voltage (VDRM): 1400 V
Maximum average on-state current (IT(AVR)): 456 A
Maximum RMS on-state current (IT(RMS)): 717 A
Non repetitive surge peak on-state current (ITSM): 5500 A
Critical repetitive rate of rise of on-state current (dI/dt): 350 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -55..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.06 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.05 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 30 mA
Package: T
DCR504ST10 Datasheet
Page #1
Page #2
Description
DCR504ST DCR504ST Phase Control Thyristor Advance Information Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001 FEATURES KEY PARAMETERS Double Side Cooling VDRM 1400V High Surge Capability IT(AV) 456A High Mean Current ITSM 6800A Fatigue Free dVdt 1000V/µs dI/dt 700A/µs APPLICATIONS High Power Drives High Voltage Power Supplies DC Motor Control VOLTAGE RATINGS Type Number Repetitive Peak Conditions Voltages VDRM VRRM V 1400 DCR504ST14 Tvj = 0
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |