DCR504ST10 SCR Spec
DCR504ST10 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 100 W
Maximum repetitive peak and off-state voltage (VDRM): 1400 V
Maximum average on-state current (IT(AVR)): 456 A
Maximum RMS on-state current (IT(RMS)): 717 A
Non repetitive surge peak on-state current (ITSM): 5500 A
Critical repetitive rate of rise of on-state current (dI/dt): 350 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -55..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.06 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.05 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 30 mA
Package: T
DCR504ST10 Spec
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Description
DCR504ST DCR504ST Phase Control Thyristor Advance Information Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001 FEATURES KEY PARAMETERS Double Side Cooling VDRM 1400V High Surge Capability IT(AV) 456A High Mean Current ITSM 6800A Fatigue Free dVdt 1000V/µs dI/dt 700A/µs APPLICATIONS High Power Drives High Voltage Power Supplies DC Motor Control VOLTAGE RATINGS Type Number Repetitive Peak Conditions Voltages VDRM VRRM V 1400 DCR504ST14 Tvj = 0


