DCR890F65 Gate-turn-off Spec

DCR890F65 ELECTRICAL SPECIFICATIONS

 

   Type: Gate-turn-off
   Maximum repetitive peak and off-state voltage (V_DRM): 2500 V
   Maximum average on-state current (I_T(AVR)): 600 A
   Critical repetitive rate of rise of on-state current (dI/dt): 300 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Junction to case thermal resistance (R_TH(j-c)): 0.07 K/W

 

DCR890F65 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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DCR890F65 Spec

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Description

DCR890F65 Phase Control Thyristor DS5924-3 August 2014 (LN31844) KEY PARAMETERS FEATURES  Double Side Cooling VDRM 6500V IT(AV) 894A  High Surge Capability ITSM 12000A dV/dt* 1500V/µs dI/dt 200A/µs * Higher dV/dt selections available APPLICATIONS  Medium Voltage Soft Starts  High Voltage Power Supplies  Static Switches VOLTAGE RATINGS Part and Repetitive Peak Conditions Ordering Voltages Number VDRM and VRRM V DCR890F65* 6500 Tvj =