DCR960G18 Gate-turn-off Spec

DCR960G18 ELECTRICAL SPECIFICATIONS

 

   Type: Gate-turn-off
   Maximum repetitive peak and off-state voltage (V_DRM): 4500 V
   Maximum average on-state current (I_T(AVR)): 1000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 300 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Junction to case thermal resistance (R_TH(j-c)): 0.04 K/W

 

DCR960G18 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

DCR960G18 Spec

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Description

DCR960G18 Phase Control Thyristor DS6027-1 April 2011 (LN28238) KEY PARAMETERS FEATURES VDRM 1800 V  Double Side Cooling IT(AV) 960 A  High Surge Capability ITSM 14000 A dV/dt* 1000 V/µs dI/dt 200 A/µs * Higher dV/dt selections available APPLICATIONS  High Power Drives  High Voltage Power Supplies  Static Switches VOLTAGE RATINGS Part and Repetitive Peak Conditions Ordering Voltages Number VDRM and VRRM V DCR960G18 1800 Tvj = -40