DG646BH Gate-turn-off Spec

DG646BH ELECTRICAL SPECIFICATIONS

 

   Type: Gate-turn-off
   Maximum repetitive peak and off-state voltage (V_DRM): 4500 V
   Maximum average on-state current (I_T(AVR)): 3000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 400 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Junction to case thermal resistance (R_TH(j-c)): 0.01 K/W

 

DG646BH Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

DG646BH Spec

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Description

DG646BH25 Gate Turn-off Thyristor DS4092-5 July 2014 (LN31756) FEATURES KEY PARAMETERS  Double Side Cooling VDRM 2500V  High Reliability In Service IT(AV) 867A  High Voltage Capability ITCM 2500A dVD/dt 1000V/µs  Fault Protection Without Fuses dIT/dt 300A/µs  High Surge Current Capability  Turn-off Capability Allows Reduction in Equipment Size and Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requireme