All Transistors. SCR. DG648BH Datasheet

 

DG648BH Gate-turn-off DATASHEET

DG648BH ELECTRICAL SPECIFICATIONS

 

   Type: Gate-turn-off
   Maximum repetitive peak and off-state voltage (VDRM): 4500 V
   Maximum average on-state current (IT(AVR)): 4000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 300 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Junction to case thermal resistance (RTH(j-c)): 0.01 K/W

 

DG648BH Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

DG648BH Datasheet

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DG648BH
 datasheet

Page #2

DG648BH
 datasheet #2

Description

DG648BH45 DG648BH45 Gate Turn-off Thyristor DS4093-4 July 2014 (LN31736) APPLICATIONS KEY PARAMETERS ITCM 2000A Variable speed A.C. motor drive inverters (VSD-AC) VDRM 4500V Uninterruptable Power Supplies IT(AV) 745A High Voltage Converters dVD/dt 1000V/µs Choppers diT/dt 300A/µs Welding Induction Heating DC/DC Converters FEATURES Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capab

 
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