DG648BH Gate-turn-off DATASHEET

DG648BH ELECTRICAL SPECIFICATIONS

 

   Type: Gate-turn-off
   Maximum repetitive peak and off-state voltage (V_DRM): 4500 V
   Maximum average on-state current (I_T(AVR)): 4000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 300 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Junction to case thermal resistance (R_TH(j-c)): 0.01 K/W

 

DG648BH Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

DG648BH Datasheet

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Description

DG648BH45 DG648BH45 Gate Turn-off Thyristor DS4093-4 July 2014 (LN31736) APPLICATIONS KEY PARAMETERS ITCM 2000A Variable speed A.C. motor drive inverters (VSD-AC) VDRM 4500V Uninterruptable Power Supplies IT(AV) 745A High Voltage Converters dVD/dt 1000V/µs Choppers diT/dt 300A/µs Welding Induction Heating DC/DC Converters FEATURES Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capab