DG858BW Gate-turn-off DATASHEET

DG858BW ELECTRICAL SPECIFICATIONS

 

   Type: Gate-turn-off
   Maximum repetitive peak and off-state voltage (V_DRM): 1300 V
   Maximum average on-state current (I_T(AVR)): 700 A
   Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Junction to case thermal resistance (R_TH(j-c)): 0.07 K/W

 

DG858BW Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

DG858BW Datasheet

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Description

DG858BW45 DG858BW45 Gate Turn-off Thyristor DS4096-5 July 2014 (LN31733) FEATURES KEY PARAMETERS ITCM 3000A Double Side Cooling VDRM 4500V High Reliability In Service IT(AV) 1180A High Voltage Capability dVD/dt 1000V/µs Fault Protection Without Fuses diT/dt 300A/µs High Surge Current Capability Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS Variab