All Transistors. SCR. DGT305SE Datasheet

 

DGT305SE SCR DATASHEET

DGT305SE ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 16 W
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum average on-state current (IT(AVR)): 70 A
   Maximum RMS on-state current (IT(RMS)): 110 A
   Non repetitive surge peak on-state current (ITSM): 1200 A
   Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.24 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 2.35 V
   Triggering gate current (IGT): 200 mA
   Holding current (IH): 60 mA

Package: TO‑209AC

 

DGT305SE Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

DGT305SE Datasheet

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DGT305SE
 datasheet

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DGT305SE
 datasheet #2

Description

DGT305SE DGT305SE Gate Turn-off Thyristor DS5519-4 July 2014 (LN31740) FEATURES KEY PARAMETERS Double Side Cooling ITCM 700A High Reliability In Service VDRM 1800V High Voltage Capability IT(AV) 240A Fault Protection Without Fuses dVD/dt 500V/µs High Surge Current Capability diT/dt 500A/µs Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS Variable s

 
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