DGT305SE SCR DATASHEET
DGT305SE ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 16 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum average on-state current (IT(AVR)): 70 A
Maximum RMS on-state current (IT(RMS)): 110 A
Non repetitive surge peak on-state current (ITSM): 1200 A
Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.24 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 2.35 V
Triggering gate current (IGT): 200 mA
Holding current (IH): 60 mA
Package: TO‑209AC
DGT305SE Datasheet
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Description
DGT305SE DGT305SE Gate Turn-off Thyristor DS5519-4 July 2014 (LN31740) FEATURES KEY PARAMETERS Double Side Cooling ITCM 700A High Reliability In Service VDRM 1800V High Voltage Capability IT(AV) 240A Fault Protection Without Fuses dVD/dt 500V/µs High Surge Current Capability diT/dt 500A/µs Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS Variable s
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |