All Transistors. SCR. DRA03TE Datasheet

 

DRA03TE SCR DATASHEET

DRA03TE ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 0.1 W
   Maximum repetitive peak and off-state voltage (VDRM): 200 V
   Maximum average on-state current (IT(AVR)): 2 A
   Non repetitive surge peak on-state current (ITSM): 20 A
   Critical rate of rise of off-state voltage (dV/dt): 15 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to case thermal resistance (RTH(j-c)): 12 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 3 mA

Package: TO‑202

 

DRA03TE Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

DRA03TE Datasheet

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DRA03TE
 datasheet

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DRA03TE
 datasheet #2

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