All Transistors. SCR. DRA8B Datasheet

 

DRA8B SCR DATASHEET

DRA8B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 5 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum average on-state current (IT(AVR)): 8 A
   Maximum RMS on-state current (IT(RMS)): 12.6 A
   Non repetitive surge peak on-state current (ITSM): 120 A
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 3 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 40 mA
   Holding current (IH): 60 mA

Package: TO‑220

 

DRA8B Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

DRA8B Datasheet

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DRA8B
 datasheet

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DRA8B
 datasheet #2

Description



 
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