All Transistors. SCR. DRE3G Datasheet

 

DRE3G SCR-module DATASHEET

DRE3G ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (PGM): 3 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 130 A
   Maximum RMS on-state current (IT(RMS)): 289 A
   Non repetitive surge peak on-state current (ITSM): 4570 A
   Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.05 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.63 V
   Triggering gate current (IGT): 150 mA
   Holding current (IH): 500 mA

 

DRE3G Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

DRE3G Datasheet

Page #1

DRE3G
 datasheet

Page #2

DRE3G
 datasheet #2

Description



 
Back to Top