DT160-10 SCR-module DATASHEET
DT160-10 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 3 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 160 A
Maximum RMS on-state current (IT(RMS)): 355 A
Non repetitive surge peak on-state current (ITSM): 4990 A
Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.05 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.58 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 500 mA
DT160-10 Datasheet
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Description
DT DT160 Series Power Modules - Diode/Thyristor Phase Control Thyristors FEATURES TYPICAL APPLICATIONS High surge capability Power supplies Qualified for industrial level Machine tools control Thick copper baseplate High power drives Easy mounting on heatsink Welders Medium traction MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 160 A IT(AV), IF(AV) o TCase 85 C 355 A IT(R
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |