DT90-12 Triac DATASHEET

DT90-12 ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 10 A
   Non repetitive surge peak on-state current (I_TSM): 80 A
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.8 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 30 mA
   Holding current (I_H): 50 mA

Package: TO‑220

DT90-12 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

DT90-12 Datasheet

Page #1

Page #2

Description

DT DT90 Series Power Modules - Diode/Thyristor Phase Control FEATURES TYPICAL APPLICATIONS Thyristors  High surge capability  Power supplies  Qualified for industrial level  Machine tools control  Thick copper baseplate  High power drives  Easy mounting on heatsink  Welders  International standard TO-240AA  Medium traction MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 90 A IT(AV), I

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. DT90-12 Datasheet