All Transistors. SCR. DTC10E-N Datasheet

 

DTC10E-N SCR DATASHEET

DTC10E-N ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 1 W
   Maximum repetitive peak and off-state voltage (VDRM): 200 V
   Maximum average on-state current (IT(AVR)): 0.51 A
   Maximum RMS on-state current (IT(RMS)): 0.8 A
   Non repetitive surge peak on-state current (ITSM): 16 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 20 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -65..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 160 K/W
   Junction to case thermal resistance (RTH(j-c)): 75 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 0.012 mA
   Holding current (IH): 5 mA

Package: TO92

 

DTC10E-N Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

DTC10E-N Datasheet

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DTC10E-N
 datasheet

Page #2

DTC10E-N
 datasheet #2

Description



 
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