EC103B1 SCR DATASHEET
EC103B1 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 0.51 A
Maximum RMS on-state current (IT(RMS)): 0.8 A
Non repetitive surge peak on-state current (ITSM): 16 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -65..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 160 K/W
Junction to case thermal resistance (RTH(j-c)): 75 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 0.2 mA
Holding current (IH): 5 mA
Package: TO92
EC103B1 Datasheet
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Description
E5 TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-251 AK TO-252 V-Pak D-Pak G Sensitive SCRs RoHS (0.8 A to 10 A) E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave unidirectional, gate-controlled rectifiers (SCR-thyristor) which complement Teccor's line of power SCRs. This group of Features packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with gate sensitivities of 12 µA to 500 µA. For gate currents in the • RoHS
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