EC103M SCR DATASHEET
EC103M ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 0.51 A
Maximum RMS on-state current (IT(RMS)): 0.8 A
Non repetitive surge peak on-state current (ITSM): 16 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 20 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -65..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 160 K/W
Junction to case thermal resistance (RTH(j-c)): 75 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 0.5 mA
Holding current (IH): 8 mA
Package: TO92
EC103M Datasheet
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Description
E5 TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-251 AK TO-252 V-Pak D-Pak G Sensitive SCRs RoHS (0.8 A to 10 A) E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave unidirectional, gate-controlled rectifiers (SCR-thyristor) which complement Teccor's line of power SCRs. This group of Features packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with gate sensitivities of 12 µA to 500 µA. For gate currents in the • RoHS
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |