ET013 SCR DATASHEET
ET013 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 240 W
Maximum repetitive peak and off-state voltage (VDRM): 4500 V
Maximum average on-state current (IT(AVR)): 400 A
Maximum RMS on-state current (IT(RMS)): 630 A
Non repetitive surge peak on-state current (ITSM): 8400 A
Critical repetitive rate of rise of on-state current (dI/dt): 1000 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.03 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 4 V
Triggering gate current (IGT): 2500 mA
ET013 Datasheet
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Description
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com PNPN SWITCHES ET013 - ET020 DO - 41 SIDACs 0.6 Amperes 120 thru 210 Volts 1.00 (25.4) 0.107 (2.7) MIN. 0.080 (2.0) 0.205 (5.2) 0.161 (4.1) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant 1.00 (25.4) * Lead : Axial lead solderable per MIL-STD-202, 0.034 (0.86) MIN. 0.028 (0.71) Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position :
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |