FG2000JV-90DA SCR DATASHEET

FG2000JV-90DA ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 3300 V
   Maximum average on-state current (I_T(AVR)): 3 A
   Peak on-state voltage drop (V_TM): 4 V
   Triggering gate current (I_GT): 125 mA

FG2000JV-90DA Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

FG2000JV-90DA Datasheet

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Description

MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING Dimension in mm FG2000JV-90DA GATE (WHITE) 356 ± 8 AUXILIARY CATHODE CONNECTOR (RED) φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2 φ 63 ± 0.5 CATHODE TYPE NAME ¡ITQRM Repetitive controllable on-state current ............. 2000A ANODE φ 63 ± 0.5 ¡IT(AV) Average on-state current ...................... 600A φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2 φ 93 max ¡VDRM Repetitive peak off state

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. FG2000JV-90DA Datasheet