FS0401BD SCR DATASHEET
FS0401BD ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 30 A
Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
Package: TO‑251
FS0401BD Datasheet
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Description
FS04...D SENSITIVE GATE SCR DPAK Gate Trigger Current On-State Current (Plastic) 4 Amp < 200 mA Off-State Voltage 200 V ÷ 800 V K These series of Silicon Controlled A Rectifier use a high performance G PNPN technology. A These parts are intended for general purpose applications where high gate G sensitivity is required. K Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) On-state Current 180° Conduction Angle
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |