All Transistors. SCR. FS0802BW Datasheet

 

FS0802BW SCR DATASHEET

FS0802BW ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 8 A
   Non repetitive surge peak on-state current (ITSM): 70 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs

Package: TO‑251

 

FS0802BW Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

FS0802BW Datasheet

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FS0802BW
 datasheet

Page #2

FS0802BW
 datasheet #2

Description

FS0802.W SENSITIVE GATE SCR TO220-F (FULLY ISOLATED CASE) Gate Trigger Current On-State Current 8 Amp < 200 mA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled K A Rectifier use a high performance G PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit I On-state Current 180º Conduction Angl

 
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