FS0802BW SCR DATASHEET
FS0802BW ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 70 A
Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
Package: TO‑251
FS0802BW Datasheet
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Description
FS0802.W SENSITIVE GATE SCR TO220-F (FULLY ISOLATED CASE) Gate Trigger Current On-State Current 8 Amp < 200 mA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled K A Rectifier use a high performance G PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit I On-state Current 180º Conduction Angl
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |