All Transistors. SCR. FS0802SD Datasheet

 

FS0802SD SCR DATASHEET

FS0802SD ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 200 V
   Maximum RMS on-state current (IT(RMS)): 8 A
   Non repetitive surge peak on-state current (ITSM): 70 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Triggering gate current (IGT): 0.5 mA

Package: TO‑251

 

FS0802SD Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

FS0802SD Datasheet

Page #1

FS0802SD
 datasheet

Page #2

FS0802SD
 datasheet #2

Description

FS0802.D SENSITIVE GATE SCR DPAK Gate Trigger Current On-State Current (Plastic) 8 Amp < 200 µΑ Off-State Voltage 200 V ÷ 800 V K These series of Silicon Controlled A Rectifier use a high performance G PNPN technology. A These parts are intended for general purpose applications where high gate G sensitivity is required. K Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) On-state Current 180° Conduction Ang

 
Back to Top