FS0802SD SCR DATASHEET

FS0802SD ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 70 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Triggering gate current (I_GT): 0.5 mA

Package: TO‑251

 

FS0802SD Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

FS0802SD Datasheet

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Description

FS0802.D SENSITIVE GATE SCR DPAK Gate Trigger Current On-State Current (Plastic) 8 Amp < 200 µΑ Off-State Voltage 200 V ÷ 800 V K These series of Silicon Controlled A Rectifier use a high performance G PNPN technology. A These parts are intended for general purpose applications where high gate G sensitivity is required. K Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) On-state Current 180° Conduction Ang