FS0802SI SCR DATASHEET

FS0802SI ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 70 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Triggering gate current (I_GT): 0.5 mA

Package: TO‑252

 

FS0802SI Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

FS0802SI Datasheet

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Description

FS0802.I SENSITIVE GATE SCR IPAK (Plastic) Gate Trigger Current On-State Current 8 Amp < 200 mA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled G Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit A I On-state Current 180º Conduction Angle, Tc = 110