All Transistors. SCR. FS0808BI Datasheet

 

FS0808BI SCR DATASHEET

FS0808BI ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 8 A
   Non repetitive surge peak on-state current (ITSM): 70 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Triggering gate current (IGT): 0.5 mA

Package: TO‑252

 

FS0808BI Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

FS0808BI Datasheet

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FS0808BI
 datasheet

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FS0808BI
 datasheet #2

Description

FS08...I STANDARD SCR IPAK (Plastic) On-State Current Gate Trigger Current 8 Amp 0.5 mA to 15 mA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled G Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit A I On-state Current 180º Conduction Angle, Tc = 110

 
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