FS0809BI SCR DATASHEET
FS0809BI ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 95 A
Critical rate of rise of off-state voltage (dV/dt): 150 V/µs
Triggering gate current (IGT): 4 mA
Package: TO‑220AB
FS0809BI Datasheet
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Description
FS08...I STANDARD SCR IPAK (Plastic) On-State Current Gate Trigger Current 8 Amp 0.5 mA to 15 mA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled G Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit A I On-state Current 180º Conduction Angle, Tc = 110
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |